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Toshiba/东芝 2SK2201(TE16R) Field Effect Transistor
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| Installation type: | Surface mount |
|---|---|
| Other name: | 2SK2201TE16R 2SK2201TE16TR |
| Packaging of supplier's equipment: | PW-MOLD |
| Power - maximum: | 20W |
| FET features: | Logic level gate |
| Compliance with lead free requirements / RoHS regulations: | Lead / non RoHS compliance |
| Gate charge (QG) @ VGS: | 13.5nC @ 10V |
| Input capacitance (CISS) @ VDS: | 280pF @ 10V |
| Drain to source voltage (VDSS): | 100V |
| VGS (th) at ID (max): | 2V @ 1mA |
| Current - continuous drain (ID) @ 25 ° C: | 3A |
| Species: | Insulated gate (MOSFET) |
| Channel type: | MOSFET N channel, metal oxide |
| Conduction mode: | Enhancement type |
| Brand: | Toshiba / Toshiba |
| Model: | 2SK2201(TE16R) |
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