ROHM Semiconductor R6008ANX Field-Effect Transistor

Installation Type:	Through-hole
Supplier Equipment Packaging:	TO-220FM
Power - Maximum:	500,000
FET Features:	Standard Model
Compliance with lead-free requirements / Compliance with the regulations of the Restricted Hazardous Substances Directive (RoHS):	Lead-free / Complies with the requirements of the Restricted Substances Directive (RoHS)
Gate charge (Qg) @ Vgs:	21nC @ 10V
Input Capacitance (Ciss) @ Vds:	680pF @ 25V
漏极至源极电压(Vdss)：	600V
Maximum Vgs(th) at Id:	4.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C:	8A
Materials:	SB Schottky Barrier Gate
Purpose:	SW-REG/Switching Power Supply
类型:	Insulated Gate Valve (MOSFET)
Channel type:	MOSFET N-channel, metal oxide
Conduction Method:	Enhanced
Encapsulation Shape:	TO-220-3 Whole Pack
Brand:	ROHM Semiconductor
Model:	R6008ANX